H5TC4G63AFR-PBI vs H5TC4G63AFR-PBJ Perbandingan
Perbandingan bersamaan detil H5TC4G63AFR-PBI dari SK hynix dan H5TC4G63AFR-PBJ dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5TC4G63AFR-PBI | H5TC4G63AFR-PBJ |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | — |
| Total Memory Size | 4 Gb | — |
| Laju Data | DDR3-1600 (PC3L-12800) | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| Tegangan Pemuat | 1.35 V | 1.35 V |
| Number of Banks | 8 | — |
| Burst Length | 8 (BL8) | — |
| Latensi CAS | Programmable | [DATA_NEEDED: CAS Latency] |
| On-Die Termination (ODT) | Yes | — |
| Refresh Period | 7.8 us at 85°C | — |
| Rentang Suhu Kerja | -40°C to +95°C | — |
| Paket | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | 96-ball TFBGA |
| Tipe Mounting | Surface Mount | — |
| Number of Terminals | 96 | 96 |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Ukuran Memori | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |