IAUC100N04S6N028ATMA1 vs IAUZ40N10S5N130ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N04S6N028ATMA1 dari Infineon dan IAUZ40N10S5N130ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ AktifInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC100N04S6N028ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55°C to +175°C (TJ) |
| Paket | PG-TDSON-8 (TDSON-8) | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Status RoHS | Compliant | — |
| Part Number | — | IAUZ40N10S5N130ATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free / RoHS | — | ROHS3 Compliant |