IAUC100N10S5N040ATMA1 vs IPD320N20N3GATMA1 Perbandingan

Perbandingan bersamaan detil IAUC100N10S5N040ATMA1 dari Infineon dan IPD320N20N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC100N10S5N040ATMA1 IPD320N20N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS-5 OptiMOS 3
Drain-Source Voltage (VDS) 100 V 200 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A —
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Rentang Suhu Kerja -55C to +175C (junction) -55 C to +175 C (Tj)
Paket PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260C peak reflow) —
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
Status RoHS Compliant —
Continuous Drain Current (ID, Tc) — 34 A
Power Dissipation (PD, Tc) — 136 W
On-Resistance RDS(on) max — 32 mOhm at VGS = 10 V
Gate Charge x RDS(on) FOM — Excellent (per datasheet)
Lead Plating — Pb-free
RoHS Compliance — Compliant
JEDEC Qualification — Qualified for target application
Channel Mode — Enhancement mode
Gate Threshold Level — Normal level (per datasheet title)

Spek dan Sumber

IAUC100N10S5N040ATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon