IAUC100N10S5N040ATMA1 vs IPD320N20N3GATMA1 Comparison

Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IPD320N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N10S5N040ATMA1

IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N10S5N040ATMA1 IPD320N20N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.34
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS-5 OptiMOS 3
Drain-Source Voltage (VDS) 100 V 200 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) β€”
Pulsed Drain Current (IDM) 400 A β€”
RDS(on) max @ VGS=10V 4 mΞ© β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Maximum Power Dissipation (PD) 167 W @ TC=25C β€”
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W β€”
Operating Temperature Range -55C to +175C (junction) -55 C to +175 C (Tj)
Package PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (up to 260C peak reflow) β€”
Automotive Qualification AEC-Q100 qualified β€”
Avalanche Rating 100% Avalanche tested β€”
AOI Compatibility Feasible for Automatic Optical Inspection β€”
RoHS Status Compliant β€”
Continuous Drain Current (ID, Tc) β€” 34 A
Power Dissipation (PD, Tc) β€” 136 W
On-Resistance RDS(on) max β€” 32 mOhm at VGS = 10 V
Gate Charge x RDS(on) FOM β€” Excellent (per datasheet)
Lead Plating β€” Pb-free
RoHS Compliance β€” Compliant
JEDEC Qualification β€” Qualified for target application
Channel Mode β€” Enhancement mode
Gate Threshold Level β€” Normal level (per datasheet title)

Datasheets & Resources

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