IAUC100N10S5N040ATMA1 vs IPD320N20N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5N040ATMA1 disebabkan oleh Infineon dan IPD320N20N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC100N10S5N040ATMA1 IPD320N20N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode N-Channel
Technology OptiMOS-5 OptiMOS 3
Drain-Source Voltage (VDS) 100 V 200 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A —
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +175 C (Tj)
Kemasan PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260C peak reflow) —
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
Status RoHS Compliant —
Continuous Drain Current (ID, Tc) — 34 A
Power Dissipation (PD, Tc) — 136 W
On-Resistance RDS(on) max — 32 mOhm at VGS = 10 V
Gate Charge x RDS(on) FOM — Excellent (per datasheet)
Lead Plating — Pb-free
RoHS Compliance — Compliant
JEDEC Qualification — Qualified for target application
Channel Mode — Enhancement mode
Gate Threshold Level — Normal level (per datasheet title)

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