IAUC41N06S5L100ATMA1 vs IAUCN10S7N021ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC41N06S5L100ATMA1 dari Infineon dan IAUCN10S7N021ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC41N06S5L100ATMA1 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (Trench MOSFET) OptiMOS™ 7 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Rentang Suhu Kerja -55C to +175C —
Paket PG-TDSON-8-33 (TDSON-8, 5x6 mm) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Level MSL [DATA_NEEDED: MSL rating] —
Automotive Qualified Yes (AEC-Q101 automotive grade) —
Status RoHS Compliant Compliant
Interconnect Copper clip (low-inductance) —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc — 175 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Suhu Hubung Kerja — -55 °C to +175 °C
Qualification — AEC-Q101 (Automotive)

Spek dan Sumber

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