IAUC41N06S5L100ATMA1 vs IAUCN10S7N021ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC41N06S5L100ATMA1 disebabkan oleh Infineon dan IAUCN10S7N021ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC41N06S5L100ATMA1 IAUCN10S7N021ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (Trench MOSFET) OptiMOS™ 7 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TDSON-8-33 (TDSON-8, 5x6 mm) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Channel Type N-Channel —
Aras MSL [DATA_NEEDED: MSL rating] —
Automotive Qualified Yes (AEC-Q101 automotive grade) —
Status RoHS Compliant Compliant
Interconnect Copper clip (low-inductance) —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc — 175 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Qualification — AEC-Q101 (Automotive)

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