IAUCN04S7N009ATMA1 vs BSZ110N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N009ATMA1 dari Infineon dan BSZ110N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N009ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Paket | PG-TDSON-8-34 (Surface Mount) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Level MSL | 1 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Configuration | Single N-Channel | Single MOSFET |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |