IAUCN04S7N009ATMA1 vs BSZ110N08NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N009ATMA1 sa pamamagitan ng Infineon at BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IAUCN04S7N009ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Packhaging | PG-TDSON-8-34 (Surface Mount) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Level ng MSL | 1 | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Configuration | Single N-Channel | Single MOSFET |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |