IAUCN04S7N019GATMA1 vs IAUCN04S7N006TATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N019GATMA1 dari Infineon dan IAUCN04S7N006TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N019GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 147 A | — |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| Paket | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: junction temperature range from datasheet] | [DATA_NEEDED: Tj min/max] |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Technology | — | OptiMOS 7 (shielded-gate trench) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |