IAUCN04S7N019GATMA1 vs IAUCN04S7N006TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N019GATMA1 disebabkan oleh Infineon dan IAUCN04S7N006TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S7N019GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 147 A | — |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| Kemasan | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: junction temperature range from datasheet] | [DATA_NEEDED: Tj min/max] |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Technology | — | OptiMOS 7 (shielded-gate trench) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |