IAUCN04S7N019GATMA1 vs IAUCN04S7N019DATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N019GATMA1 dari Infineon dan IAUCN04S7N019DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N019GATMA1 IAUCN04S7N019DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
Paket PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-60 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 (family)
Status RoHS Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
Rentang Suhu Kerja [DATA_NEEDED: junction temperature range from datasheet] —
Technology — OptiMOS 7 40V
Configuration — Dual N-Channel (array)
Continuous Drain Current (ID, Tc) — 160 A (Tj)
Power Dissipation (PD, Tc) — 96 W
Suhu Hubung Kerja — -55 C to +175 C
Input Capacitance (Ciss, typ.) — 1.465 nF
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
ESD Protection — Yes (gate integrated)
Level MSL — 1 (per JEDEC J-STD-020, family default)

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