IAUCN08S7N024TATMA1 vs IAUCN04S7N037GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N024TATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N024TATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 OptiMOS 7
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) Trench MOSFET, N-Channel
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tj 165 A —
Power Dissipation (Pd) at Tc 157 W —
Rds(on) Max at Vgs=10V 2.44 mOhm —
Paket / Case PG-LHDSO-10-1 (SSO10T, 5x7 mm²) —
Tipe Mounting Surface Mount Surface Mount (IMS substrate attach compatible)
Cooling Top-side cooled —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: junction/ambient temperature limits]
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant Compliant
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ] [DATA_NEEDED: Ciss]
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Paket — SSO4G 5x6 mm² (PG-THSOG-4-1)
Channel Type — N-Channel
Operating Mode — Enhancement
Level MSL — [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]

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