IAUCN08S7N024TATMA1 vs IAUCN04S7N037GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN08S7N024TATMA1 tarafından Infineon ve IAUCN04S7N037GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUCN08S7N024TATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| Paket / Kas | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| Montaj Türü | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Cooling | Top-side cooled | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Durumu | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | [DATA_NEEDED: Ciss] |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Paket | — | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| MSL Seviyesi | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |