IAUCN08S7N024TATMA1 vs IAUCN04S7N037GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N024TATMA1 disebabkan oleh Infineon dan IAUCN04S7N037GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7N024TATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 OptiMOS 7
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) Trench MOSFET, N-Channel
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tj 165 A —
Power Dissipation (Pd) at Tc 157 W —
Rds(on) Max at Vgs=10V 2.44 mOhm —
Kemasan / Case PG-LHDSO-10-1 (SSO10T, 5x7 mm²) —
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate attach compatible)
Cooling Top-side cooled —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: junction/ambient temperature limits]
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant Compliant
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ] [DATA_NEEDED: Ciss]
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Kemasan — SSO4G 5x6 mm² (PG-THSOG-4-1)
Channel Type — N-Channel
Operating Mode — Enhancement
Aras MSL — [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]

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