IAUCN10S5L110TATMA1 vs IAUCN08S7N024TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L110TATMA1 dari Infineon dan IAUCN08S7N024TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L110TATMA1 IAUCN08S7N024TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 7
Technology N-Channel MOSFET, Trench, Logic Level MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Paket PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260°C peak reflow) —
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification AEC-Q101
Status RoHS Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (Vds) — 80 V
Continuous Drain Current (Id) at Tj — 165 A
Power Dissipation (Pd) at Tc — 157 W
Rds(on) Max at Vgs=10V — 2.44 mOhm
Paket / Case — PG-LHDSO-10-1 (SSO10T, 5x7 mm²)
Cooling — Top-side cooled
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ]

Spek dan Sumber

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