IAUCN10S5L110TATMA1 vs IAUCN08S7N024TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L110TATMA1 disebabkan oleh Infineon dan IAUCN08S7N024TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L110TATMA1 IAUCN08S7N024TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 7
Technology N-Channel MOSFET, Trench, Logic Level MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) —
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification AEC-Q101
Status RoHS Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (Vds) — 80 V
Continuous Drain Current (Id) at Tj — 165 A
Power Dissipation (Pd) at Tc — 157 W
Rds(on) Max at Vgs=10V — 2.44 mOhm
Kemasan / Case — PG-LHDSO-10-1 (SSO10T, 5x7 mm²)
Cooling — Top-side cooled
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ]

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