IAUCN10S5L110TATMA1 vs IAUCN08S7N024TATMA1 比較
詳細並排比較 IAUCN10S5L110TATMA1 由 Infineon 與 IAUCN08S7N024TATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ 啟用中規格比較
| 參數 | IAUCN10S5L110TATMA1 | IAUCN08S7N024TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 7 |
| Technology | N-Channel MOSFET, Trench, Logic Level | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| 封裝 | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260°C peak reflow) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q101 |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) at Tj | — | 165 A |
| Power Dissipation (Pd) at Tc | — | 157 W |
| Rds(on) Max at Vgs=10V | — | 2.44 mOhm |
| 封裝 / 外殼 | — | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) |
| Cooling | — | Top-side cooled |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ] |