IAUCN10S5L110TATMA1 vs IAUZN10S7L289ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L110TATMA1 dari Infineon dan IAUZN10S7L289ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZN10S7L289ATMA1 IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L110TATMA1 IAUZN10S7L289ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level Trench MOSFET (N-Channel)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Paket PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TSDSON-8-44 (S3O8, 3x3 mm²)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260°C peak reflow) [DATA_NEEDED: MSL rating]
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Product Family — OptiMOS-7
Continuous Drain Current (ID, Tj) — 27 A
Power Dissipation (Ptot, Tc=25°C) — 45 W
On-State Resistance (RDS(on), max, VGS=10V) — 28.9 mΩ
Automotive Grade — AEC-Q100 qualified (Automotive MOSFET)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Rentang Suhu Kerja — -55°C to +175°C (Tj)
Jumlah Pin — 8
RoHS Compliance — Yes

Spek dan Sumber

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