IAUCN10S5L110TATMA1 vs IAUZN10S7L289ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L110TATMA1 disebabkan oleh Infineon dan IAUZN10S7L289ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZN10S7L289ATMA1 IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN10S5L110TATMA1 IAUZN10S7L289ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level Trench MOSFET (N-Channel)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TSDSON-8-44 (S3O8, 3x3 mm²)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) [DATA_NEEDED: MSL rating]
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Product Family — OptiMOS-7
Continuous Drain Current (ID, Tj) — 27 A
Power Dissipation (Ptot, Tc=25°C) — 45 W
On-State Resistance (RDS(on), max, VGS=10V) — 28.9 mΩ
Automotive Grade — AEC-Q100 qualified (Automotive MOSFET)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Gambaran Suhu Operasi — -55°C to +175°C (Tj)
Kiraan Pin — 8
RoHS Compliance — Yes

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