IAUCN10S5L110TATMA1 vs IAUZN10S7L289ATMA1 比較
詳細並排比較 IAUCN10S5L110TATMA1 由 Infineon 與 IAUZN10S7L289ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN10S5L110TATMA1 | IAUZN10S7L289ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | Trench MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| 封裝 | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TSDSON-8-44 (S3O8, 3x3 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260°C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| RoHS 狀態 | Compliant | Compliant |
| Product Family | — | OptiMOS-7 |
| Continuous Drain Current (ID, Tj) | — | 27 A |
| Power Dissipation (Ptot, Tc=25°C) | — | 45 W |
| On-State Resistance (RDS(on), max, VGS=10V) | — | 28.9 mΩ |
| Automotive Grade | — | AEC-Q100 qualified (Automotive MOSFET) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| 工作溫度範圍 | — | -55°C to +175°C (Tj) |
| 腳位數 | — | 8 |
| RoHS Compliance | — | Yes |