IAUCN10S5L280DATMA1 vs IAUCN10S7L180ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUCN10S7L180ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L280DATMA1 IAUCN10S7L180ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array Single Quad Drain Triple Source
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Paket PG-TDSON-8-61 (SSO8) PG-TDSON-8-34 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) Yes
Technology OptiMOS 5 Trench MOSFET —
Rentang Suhu Kerja -55C to +175C (junction) —
Jumlah Pin 8 —
Level MSL 1 —
Status RoHS Compliant EU RoHS Compliant with Exemption
Packing Tape & Reel (T&R) —
Series — OptiMOS™ 7
Tipe Transistor — N-Channel MOSFET
Number of Channels — 1
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tj) — 39 A
Power Dissipation (PD, Tc=25°C) — 58 W
Drain-Source On-Resistance (RDS(on)) — 16.1 mΩ @ VGS=10 V
Typical RDS(on) — 18 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.6 V
Maximum Gate-Source Voltage (VGS) — ±20 V (±16 V per JLCPCB listing)
Total Gate Charge (Qg) — 11 nC
Input Capacitance (Ciss) — 272 pF
Output Capacitance (Coss) — 668 pF
Reverse Transfer Capacitance (Crss) — 7 pF
Suhu Hubung Kerja — -55 °C to +175 °C
Channel Mode — Enhancement
Part Status — Active

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