IAUCN10S5L280DATMA1 vs IAUCN10S7L180ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L280DATMA1 disebabkan oleh Infineon dan IAUCN10S7L180ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L280DATMA1 IAUCN10S7L180ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array Single Quad Drain Triple Source
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Kemasan PG-TDSON-8-61 (SSO8) PG-TDSON-8-34 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) Yes
Technology OptiMOS 5 Trench MOSFET —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kiraan Pin 8 —
Aras MSL 1 —
Status RoHS Compliant EU RoHS Compliant with Exemption
Packing Tape & Reel (T&R) —
Series — OptiMOS™ 7
Jenis Transistor — N-Channel MOSFET
Number of Channels — 1
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tj) — 39 A
Power Dissipation (PD, Tc=25°C) — 58 W
Drain-Source On-Resistance (RDS(on)) — 16.1 mΩ @ VGS=10 V
Typical RDS(on) — 18 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.6 V
Maximum Gate-Source Voltage (VGS) — ±20 V (±16 V per JLCPCB listing)
Total Gate Charge (Qg) — 11 nC
Input Capacitance (Ciss) — 272 pF
Output Capacitance (Coss) — 668 pF
Reverse Transfer Capacitance (Crss) — 7 pF
Suhu Hubungan Operasi — -55 °C to +175 °C
Channel Mode — Enhancement
Part Status — Active

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