IAUCN10S5L280DATMA1 vs IAUZ18N10S5L420ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUZ18N10S5L420ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN10S5L280DATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | Single with built-in diode |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| Paket | PG-TDSON-8-61 (SSO8) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | OptiMOS 5 trench |
| Rentang Suhu Kerja | -55C to +175C (junction) | — |
| Jumlah Pin | 8 | — |
| Level MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Packing | Tape & Reel (T&R) | — |
| Series | — | OptiMOS 5 100V |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |