IAUCN10S7N021ATMA1 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7N021ATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7N021ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8 FL (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) Industrial grade (per Infineon OptiMOS 6 100V family)
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Rentang Suhu Kerja — -55°C to +175°C (TJ max, per datasheet)
Level MSL — 1 (per JEDEC J-STD-020, per datasheet)
Lead-Free — Yes
Bebas Halogen — Yes

Spek dan Sumber

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