IAUCN10S7N021ATMA1 vs ISC080N10NM6ATMA1 比較
詳細並排比較 IAUCN10S7N021ATMA1 由 Infineon 與 ISC080N10NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 啟用中
規格比較
| 參數 | IAUCN10S7N021ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 175 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8 FL (TDSON EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | Industrial grade (per Infineon OptiMOS 6 100V family) |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 6 100V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| 工作溫度範圍 | — | -55°C to +175°C (TJ max, per datasheet) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |