IAUCN10S7N021ATMA1 vs ISC080N10NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN10S7N021ATMA1 ISC080N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8 FL (TDSON EP)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) Industrial grade (per Infineon OptiMOS 6 100V family)
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Operating Temperature Range — -55°C to +175°C (TJ max, per datasheet)
MSL Level — 1 (per JEDEC J-STD-020, per datasheet)
Lead-Free — Yes
Halogen Free — Yes

Datasheets & Resources

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