IAUCN10S7N021ATMA1 vs ISC080N10NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N021ATMA1 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7N021ATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A 75 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8 FL (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) Industrial grade (per Infineon OptiMOS 6 100V family)
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Gambaran Suhu Operasi — -55°C to +175°C (TJ max, per datasheet)
Aras MSL — 1 (per JEDEC J-STD-020, per datasheet)
Lead-Free — Yes
Boson Bebas — Yes

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