IAUZ18N10S5L420ATMA1 vs IAUS260N10S5N019TATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ18N10S5L420ATMA1 dari Infineon dan IAUS260N10S5N019TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZ18N10S5L420ATMA1 IAUS260N10S5N019TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 100V —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 18 A —
On-Resistance RDS(on) max at VGS=10V 42 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V to 2.7 V —
Total Gate Charge (Qg) typ. 8.5 nC —
Power Dissipation (PD) at TC=25°C 30 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm PG-HDSOP-16-2 (TOLT, topside-cooled)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Technology OptiMOS 5 trench OptiMOS 5 trench-gate
Configuration Single with built-in diode —
Status RoHS Compliant Compliant
Level MSL 1 —
Product Series — OptiMOS 5
Drain-to-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 260 A (Tj)
On-State Resistance (Rds(on)) — 1.9 mΩ (typical, 10 V Vgs)
Power Dissipation (Pd) — 300 W (Tc)
Jumlah Pin — 16
Rentang Suhu Kerja — -55 C to +175 C (Tj)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Automotive Qualified — Yes (IAUS prefix denotes automotive grade)

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