IAUZ18N10S5L420ATMA1 vs IAUS260N10S5N019TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ18N10S5L420ATMA1 disebabkan oleh Infineon dan IAUS260N10S5N019TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ18N10S5L420ATMA1 IAUS260N10S5N019TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 100V —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 18 A —
On-Resistance RDS(on) max at VGS=10V 42 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V to 2.7 V —
Total Gate Charge (Qg) typ. 8.5 nC —
Power Dissipation (PD) at TC=25°C 30 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm PG-HDSOP-16-2 (TOLT, topside-cooled)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Technology OptiMOS 5 trench OptiMOS 5 trench-gate
Configuration Single with built-in diode —
Status RoHS Compliant Compliant
Aras MSL 1 —
Product Series — OptiMOS 5
Drain-to-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 260 A (Tj)
On-State Resistance (Rds(on)) — 1.9 mΩ (typical, 10 V Vgs)
Power Dissipation (Pd) — 300 W (Tc)
Kiraan Pin — 16
Gambaran Suhu Operasi — -55 C to +175 C (Tj)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Automotive Qualified — Yes (IAUS prefix denotes automotive grade)

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