IAUZ18N10S5L420ATMA1 vs IAUZ40N10S5N130ATMA1 Perbandingan
Perbandingan bersamaan detil IAUZ18N10S5L420ATMA1 dari Infineon dan IAUZ40N10S5N130ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ AktifInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUZ18N10S5L420ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 100V | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | — |
| Total Gate Charge (Qg) typ. | 8.5 nC | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Technology | OptiMOS 5 trench | OptiMOS 5 (super-junction trench) |
| Configuration | Single with built-in diode | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 | — |
| Part Number | — | IAUZ40N10S5N130ATMA1 |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| Rentang Suhu Kerja | — | -55°C to +175°C (TJ) |
| Lead-Free / RoHS | — | ROHS3 Compliant |