IAUZN04S7N049ATMA1 vs IAUCN04S7N019GATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7N049ATMA1 dari Infineon dan IAUCN04S7N019GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7N049ATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) 14 A —
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) 70 A —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed drain current] —
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) 1.2 to 4.9 mOhm —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: VGS(th)] —
Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) 45 W —
Rentang Suhu Kerja -55C to +175C (junction) [DATA_NEEDED: junction temperature range from datasheet]
Paket PG-TSDSON-8-44 (5x6 mm) PG-THSOG-4-1 (SSO4G 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Technology OptiMOS-7 trench-gate —
Product Family — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Status RoHS — Compliant
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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