IAUZN04S7N049ATMA1 vs IAUCN04S7N019GATMA1 비교
다음의 상세 나란히 비교: IAUZN04S7N049ATMA1 제조: Infineon 및 IAUCN04S7N019GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ 활성사양 비교
| 파라미터 | IAUZN04S7N049ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 | — |
| 트랜지스터 유형 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) | 14 A | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 70 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) | 1.2 to 4.9 mOhm | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: VGS(th)] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) | 45 W | — |
| 동작 온도 범위 | -55C to +175C (junction) | [DATA_NEEDED: junction temperature range from datasheet] |
| 패키지 | PG-TSDSON-8-44 (5x6 mm) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS-7 trench-gate | — |
| Product Family | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Automotive Qualification | — | AEC-Q101 (per family datasheet) |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |