IAUZN04S7N049ATMA1 vs IAUCN04S7N019GATMA1 Comparison

Detailed side-by-side comparison of IAUZN04S7N049ATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZN04S7N049ATMA1 IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon

IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon

IAUZN04S7N049ATMA1 ✓ Active

Specification Comparison

Parameter IAUZN04S7N049ATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) 14 A —
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) 70 A —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed drain current] —
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) 1.2 to 4.9 mOhm —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: VGS(th)] —
Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) 45 W —
Operating Temperature Range -55C to +175C (junction) [DATA_NEEDED: junction temperature range from datasheet]
Package PG-TSDSON-8-44 (5x6 mm) PG-THSOG-4-1 (SSO4G 5x6 mm)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Technology OptiMOS-7 trench-gate —
Product Family — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
RoHS Status — Compliant
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

Datasheets & Resources

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