IAUZN08S7L177ATMA1 vs IAUC120N04S6N009ATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN08S7L177ATMA1 dari Infineon dan IAUC120N04S6N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZN08S7L177ATMA1 IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZN08S7L177ATMA1 IAUC120N04S6N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 N-channel power MOSFET —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 35 A (Tj) —
Power Dissipation (PD) 45 W (Tc) —
On-Resistance (RDS(on)) 17.7 mΩ max —
Paket PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-TDSON-8-33 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Polarity N-Channel —
Suhu Kerja -55C to +175C (Tj, automotive grade) —
Configuration Single —
Qualification AEC-Q101 automotive —
Level MSL 1 (per JEDEC J-STD-020) 1
Lead-Free Yes —
Status RoHS Compliant —
Family Infineon OptiMOS 7 automotive, 80 V —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

Spek dan Sumber

IAUC120N04S6N009ATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon