IAUZN08S7L177ATMA1 vs IAUC120N04S6N009ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN08S7L177ATMA1 disebabkan oleh Infineon dan IAUC120N04S6N009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZN08S7L177ATMA1 IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZN08S7L177ATMA1 IAUC120N04S6N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 N-channel power MOSFET —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 35 A (Tj) —
Power Dissipation (PD) 45 W (Tc) —
On-Resistance (RDS(on)) 17.7 mΩ max —
Kemasan PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-TDSON-8-33 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Polarity N-Channel —
Suhu Operasi -55C to +175C (Tj, automotive grade) —
Configuration Single —
Qualification AEC-Q101 automotive —
Aras MSL 1 (per JEDEC J-STD-020) 1
Lead-Free Yes —
Status RoHS Compliant —
Family Infineon OptiMOS 7 automotive, 80 V —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
Arus Alir Gesa — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

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