IGD08N120S7ATMA1 vs BSC014NE2LSIATMA1 Perbandingan
Perbandingan bersamaan detil IGD08N120S7ATMA1 dari Infineon dan BSC014NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGD08N120S7ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Suhu Hubung Kerja | -40C to +175C (industry grade) | -55 °C to +150 °C |
| Paket | PG-TO252-3 (DPAK) | PG-TDSON-8-7 (SuperSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | N-Channel MOSFET (OptiMOS 25V) |
| Configuration | Single | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |