IGD08N120S7ATMA1 vs BSC014NE2LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGD08N120S7ATMA1 disebabkan oleh Infineon dan BSC014NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGD08N120S7ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Suhu Hubungan Operasi | -40C to +175C (industry grade) | -55 °C to +150 °C |
| Kemasan | PG-TO252-3 (DPAK) | PG-TDSON-8-7 (SuperSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | N-Channel MOSFET (OptiMOS 25V) |
| Configuration | Single | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 25 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Ta) | — | 33 A |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 74 W |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |