IGD08N120S7ATMA1 vs BSS214NWH6327XTSA1 Perbandingan
Perbandingan bersamaan detil IGD08N120S7ATMA1 dari Infineon dan BSS214NWH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGD08N120S7ATMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Suhu Hubung Kerja | -40C to +175C (industry grade) | — |
| Paket | PG-TO252-3 (DPAK) | PG-SOT323 (SOT-323-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | MOSFET (Metal Oxide) |
| Configuration | Single | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Suhu Kerja | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |