IGD08N120S7ATMA1 vs BSS214NWH6327XTSA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IGD08N120S7ATMA1 tarafından Infineon ve BSS214NWH6327XTSA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IGD08N120S7ATMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | IGBTs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| İşletim Jant Sıcaklığı | -40C to +175C (industry grade) | — |
| Paket | PG-TO252-3 (DPAK) | PG-SOT323 (SOT-323-3) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | MOSFET (Metal Oxide) |
| Configuration | Single | — |
| RoHS Durumu | Compliant | Compliant |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| İşletim Sıcaklığı | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |