IGD08N120S7ATMA1 vs BSS214NWH6327XTSA1 比較
詳細並排比較 IGD08N120S7ATMA1 由 Infineon 與 BSS214NWH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGD08N120S7ATMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | IGBTs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| 工作接面溫度 | -40C to +175C (industry grade) | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-SOT323 (SOT-323-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | MOSFET (Metal Oxide) |
| Configuration | Single | — |
| RoHS 狀態 | Compliant | Compliant |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| 工作溫度 | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |