IGD08N120S7ATMA1 vs BSS214NWH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGD08N120S7ATMA1 disebabkan oleh Infineon dan BSS214NWH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGD08N120S7ATMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Suhu Hubungan Operasi | -40C to +175C (industry grade) | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-SOT323 (SOT-323-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench Field Stop, 7th generation | MOSFET (Metal Oxide) |
| Configuration | Single | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Suhu Operasi | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |