IGT65R025D2ATMA1 vs IPL60R105P7AUMA1 Perbandingan

Perbandingan bersamaan detil IGT65R025D2ATMA1 dari Infineon dan IPL60R105P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IGT65R025D2ATMA1 IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon

IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon

IGT65R025D2ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IGT65R025D2ATMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN Gen2 (G5) —
Tipe Transistor N-Channel GaN HEMT, enhancement-mode —
Drain-Source Voltage (Vdss) 650 V —
Continuous Drain Current (Id, Tc) 70 A —
Power Dissipation (Pd, Tc) 236 W —
On-State Resistance (Rds(on)) 25 mΩ (typical, per MPN suffix) —
Paket PG-HSOF-8 (source-down, bottom-cooled) PG-VSON-4 (4-pin SMD with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Rentang Suhu Kerja -55C to +150C (junction, typical) -55C to +150C
Technology GaN-on-Si, 200 mm wafer, wide-bandgap Superjunction (SJ) N-Channel Power MOSFET
Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Output Charge (Qoss) [DATA_NEEDED: Qoss typical value] —
Reverse Recovery Charge (Qrr) Near-zero (GaN characteristic) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Series — CoolMOS P7
Drain-Source Voltage (VDS) — 600 V
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Channel Type — N-Channel
Bebas Halogen — Yes
Lead-Free — Yes

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