IGT65R025D2ATMA1 vs IPL60R105P7AUMA1 比較
詳細並排比較 IGT65R025D2ATMA1 由 Infineon 與 IPL60R105P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 啟用中規格比較
| 參數 | IGT65R025D2ATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | — |
| 電晶體類型 | N-Channel GaN HEMT, enhancement-mode | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id, Tc) | 70 A | — |
| Power Dissipation (Pd, Tc) | 236 W | — |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) | — |
| 封裝 | PG-HSOF-8 (source-down, bottom-cooled) | PG-VSON-4 (4-pin SMD with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| 工作溫度範圍 | -55C to +150C (junction, typical) | -55C to +150C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | Superjunction (SJ) N-Channel Power MOSFET |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | — |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| 無鹵素 | — | Yes |
| Lead-Free | — | Yes |