IPA60R190C6XKSA1 vs IPP60R190P6XKSA1 Perbandingan
Perbandingan bersamaan detil IPA60R190C6XKSA1 dari Infineon dan IPP60R190P6XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPA60R190C6XKSA1 | IPP60R190P6XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P6 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C (junction) |
| Paket | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| Status RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| Level MSL | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |