IPA60R190C6XKSA1 vs IPP60R190P6XKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPA60R190C6XKSA1 sa pamamagitan ng Infineon at IPP60R190P6XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP60R190P6XKSA1 - 600V CoolMOS P6 N-Channel MOSFET | Infineon
IPP60R190P6XKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPA60R190C6XKSA1 | IPP60R190P6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P6 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc=25C) | 34 W | — |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C (junction) |
| Packhaging | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| Level ng MSL | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |