IPB020N10N5LFATMA1 vs IAUC120N06S5L011ATMA1 Perbandingan

Perbandingan bersamaan detil IPB020N10N5LFATMA1 dari Infineon dan IAUC120N06S5L011ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB020N10N5LFATMA1 IAUC120N06S5L011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET OptiMOS 5 60 V (S5 generation)
Technology N-Channel Enhancement-Mode Power MOSFET —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Paket PG-TO263-3 (D2PAK) PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Marking Code 020N10LF —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 60 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Avalanche Energy Rated — Yes (EAS)

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IAUC120N06S5L011ATMA1

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