IPB020N10N5LFATMA1 vs IAUC120N06S5L011ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB020N10N5LFATMA1 disebabkan oleh Infineon dan IAUC120N06S5L011ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB020N10N5LFATMA1 IAUC120N06S5L011ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET OptiMOS 5 60 V (S5 generation)
Technology N-Channel Enhancement-Mode Power MOSFET —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Kemasan PG-TO263-3 (D2PAK) PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +175 °C —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Marking Code 020N10LF —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 60 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) — 310 A (Tj), 120 A marketing
R_DS(on) max — [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) — 188 W at T_C = 25 °C
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Avalanche Energy Rated — Yes (EAS)

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