IPB027N10N3GATMA1 vs IPD046N08N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB027N10N3GATMA1 dari Infineon dan IPD046N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB027N10N3GATMA1 IPD046N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS™ 5 trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Rentang Suhu Kerja -55°C to +175°C (TJ) —
Paket PG-TO263-3 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Status RoHS Compliant ROHS3 Compliant
Level MSL [DATA_NEEDED: moisture sensitivity level] 1 (per JEDEC J-STD-020)
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Product Series — OptiMOS™ 5 80V
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc=25°C — 90 A
On-Resistance RDS(on) Max at VGS=10V — 4.6 mΩ
Gate-Source Voltage (VGS) Max — ±20 V
Power Dissipation (PD) at Tc=25°C — 125 W
Rentang Suhu Hubung Kerja — -55 °C to +175 °C
Paket / Case — PG-TO252-3 (DPAK), 3-pin (2 leads + tab)
Configuration — Single N-channel, 3-pin (Gate / Drain tab / Source)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon