IPB027N10N3GATMA1 vs IPD046N08N5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB027N10N3GATMA1 sa pamamagitan ng Infineon at IPD046N08N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 ✓ Nakahanda
Infineon
IPD046N08N5ATMA1 IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon

IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon

IPD046N08N5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB027N10N3GATMA1 IPD046N08N5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 3 (Trench MOSFET) OptiMOS™ 5 trench MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A —
Power Dissipation (PD) at TC=25°C 300 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ —
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values] —
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ) —
Packhaging PG-TO263-3 (D2PAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value] —
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure] —
Tindminan RoHS Compliant ROHS3 Compliant
Level ng MSL [DATA_NEEDED: moisture sensitivity level] 1 (per JEDEC J-STD-020)
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V] —
Manufacturer — Infineon Technologies
Product Series — OptiMOS™ 5 80V
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc=25°C — 90 A
On-Resistance RDS(on) Max at VGS=10V — 4.6 mΩ
Gate-Source Voltage (VGS) Max — ±20 V
Power Dissipation (PD) at Tc=25°C — 125 W
Hanay ng Temperature ng Junction na Operasyon — -55 °C to +175 °C
Packhaging / Kaso — PG-TO252-3 (DPAK), 3-pin (2 leads + tab)
Configuration — Single N-channel, 3-pin (Gate / Drain tab / Source)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita